Abstract
In our study, we characterize the temperature and stress dependence of the substrate current, and will present a complete substrate-current model which is suitable for both room temperature and liquid-nitrogen temperature operations. A number of DDD samples are presented to justify our new substrate current model. The theoretical results are found in good agreement with the measurement data and the average error is less than 7%. These consistences between the measurement data and the simulated data will be enhanced the physical understanding of substrate current in MOSFETs.
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