Abstract
Vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field effect transistors (MOSFETs), featuring vertical geometry and typically p-channel, are poised for application in future logic technology, high-voltage and high-power miniaturization complementary circuits. P-channel achieving high breakdown voltage and low on-resistance can be realized through the use of p− drift layer, while a trench structure is shown to be beneficial for increasing the drain current density of vertical-type devices. However, the cumulative impact of these key parameters on the performance of vertical-type diamond MOSFETs remains unclear. In this paper, we explore the physical mechanism that how the key parameters design affects on off-state, breakdown and output characteristics has been simulated using Silvaco TCAD tools. We propose a vertical-type trench-gate 2DHG diamond MOSFET that is favorable for general integration applications and exhibits equivalent performance to the double-gate vertical structure without relying on a high concentration of nitrogen doped layer. This demonstrates that our work offers a universal approach for optimizing the comprehensive device performance in vertical-type structures, accounting for the effects of multiple parameters across all wide bandgap material-based FETs.
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