Abstract
The influence of laser pulses on the structure and electrophysical properties of resistive thick films based on the Sn0.9Sb0.1O2 solid solution is studied. Scanning electron microscopy, atomic force microscopy, and X-ray diffraction are used to examine the structure of resistive thick films and determine the distribution of Sn0.9Sb0.1O2 solid solution in surface layers and across the film. Exposure of thick resistive films to nano- and microsecond laser pulses changes their currentvoltage characteristics compared to samples subjected to millisecond pulses. The current-voltage characteristics become practically linear in the range from 1 to 10–11 V, thus allowing one to determine the optimum (α = 1) operating voltage range for resistors. The temperature coefficient of resistance depends on the length and energy of pulses.
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