Abstract
The results of reactive ion etching of GaAs in Freon-12 plasma and its mixtures with oxygen are presented. The dependencies of etching rate on target temperature, plasma pressure and composition of etching gas mixture are considered. The influence of ion bombardment on the process of etching is studied. The elemental composition of the surface was measured using Auger electron spectroscopy and X-ray photoelectron spectroscopy. It is shown that the film with a complicated composition is grown on the surface during etching, but it does not stop the etching process. At a lower concentration of oxygen in the etching gas mixture, the formed oxide layer on the surface becomes non-homogeneous, having a high concentration of impurities.
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