Abstract
In this study, we report the synthesis of manganese oxide (MnxOy) thin films on stainless steel, silicon, and borosilicate glass substrates via atmospheric pressure chemical vapor deposition (AP-CVD) using Mn(thd)3 and O3 as precursor and reactive gas, respectively. Deposition was achieved at a low temperature of 300 °C under atmospheric pressure, offering a cost-effective and scalable alternative to traditional high-vacuum CVD methods. The films displayed excellent adhesion and reproducibility, with substrate-dependent variations in film coloration, crystal phases, and morphology. X-ray diffraction (XRD) and Raman spectroscopy confirmed the presence of Mn3O4 and Mn2O3 phases, with Mn3O4 predominating on stainless steel and silicon, while Mn2O3 was more prominent on glass. Scanning electron microscopy (SEM) revealed granular structures with uniform grain sizes, particularly on stainless steel substrates. X-ray photoelectron spectroscopy (XPS) confirmed Mn2+ and Mn3+ oxidation states, consistent with the phase distribution observed by XRD and Raman analysis. This work demonstrates the potential of AP-CVD for scalable manganese oxide thin-film synthesis, particularly for energy storage applications, where Mn3O4 and Mn2O3 can serve as precursors to δ-MnO2 in supercapacitors. The method's simplicity, combined with the high-quality films produced, makes it a promising approach for future research and industrial-scale applications.
Published Version
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