Abstract
Precision measurements of the microwave surface resistance Rs of in situ MgB2 films directly reveal an exponential behavior of Rs at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of Rs is well described by a Mattis–Bardeen formalism, but with a small gap ratio of Δ(0)/kTc=0.72, corresponding to Δ(0)=1.9 meV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
