Abstract
The carrier-induced index change was measured using a novel injection-reflection technique in combination with differential carrier lifetime data. The observed relation between index change and injected carrier density at bandgap wavelength is nonlinear and is approximately given by delta n/sub act/=-6.1*10/sup -14/ (N)/sup 0.66/ for a 1.5- mu m laser and delta n/sub act/=-1.3*10/sup -14/ (N)/sup 0.68/ for a 1.3- mu m laser. The carrier-induced index change for a 1.3- mu m laser at 1.53- mu m wavelength is smaller and is given by delta n/sub act/=-9.2*10/sup -16/ (N)/sup 0.72/. >
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