Abstract
The effects of pattern density on CMP characteristics were investigated using specially designed wafer for the characterization of pattern-dependencies in STI CMP [1]. The purpose of this study is to investigate the planarization behavior based on a direct STI CMP used in cerium (CeO2) based slurry system in terms of pattern density variation. The minimal design rule (DR) of 180nm generation technology node was adopted for the mask layout. The mask was successfully applied for evaluation of a cerium (CeO2) abrasive based direct STI CMP process. In this study, we described a planarization behavior of the loading-effects of pattern density variation which were characterized with layout pattern density and pitch variations using masks mentioned above. Furthermore, the characterizing pattern dependent on the variations of the dimensions and spacing features, in thickness remaining after CMP, were analyzed and evaluated. The goal was to establish a concept of library method which will be used to generate desig...
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