Abstract
Piezoresistive sensor was one of the earliest silicon MEMS devices, which based on the theory of piezoresistive. In order to build the piezoresistive IP library for the MEMS foundry, we improved the structures of the piezoresistive based on the achievement of Liwei Lin1, and new analytic model and design software for square shape membrance has been developed. The ability to calculate sensitivity and linearity of MEMS piezoresistive sensor using the new model have been demonstrated. As results, output voltage, sensitivity and linearity characteristics of MEMS sensor are presented in this paper.
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