The study of the triboelectric potential in h-BN and MoS2 thin layers

Abstract

The values of triboelectric potentials in the thin films of h-BN and MoS2 were studied by the methods of SPM. The dependence of the triboelectric potential on the loading force and the value of the potential on the SPM probe was determined. It was established that the triboelectric potential value depended on the difference in the Fermi levels (and, accordingly, the difference in the work function values) of the SPM probe and the layer under study. The density of the triboelectric charge in the thin films h-BN and MoS2 was σ tr ∼ 2 ÷ 3 mC/m2.