The study of temperature effect on the performance characteristics of the InGaN-based vertical cavity surface emitting laser (VCSEL) by solving the rate equations

Abstract

The use of semiconductor lasers is beneficial in long-distance communications. Practical communication systems based on these lasers need high ambient temperature, with temperature changes between [Formula: see text]C and [Formula: see text]C. The study of the temperature-dependent response of these lasers is important to improve them. This study investigates the effect of temperature on InGaN-based vertical cavity surface emitting lasers (VCSEL). The active region in this structure includes a single quantum well (SQW). The rate equations of carriers and densities are numerically solved. The time variations of carrier density, photon density and output power ([Formula: see text], [Formula: see text] and [Formula: see text]) at [Formula: see text]C and the current injection of 0.04 A are obtained. Values obtained for threshold current and output power include 7 mA and 44 mW, respectively. The effect of temperature on the time variations of [Formula: see text], [Formula: see text] and [Formula: see text] from [Formula: see text]C to [Formula: see text]C is studied. Results show that these parameters decrease and the threshold current increases with an increase in temperature. Furthermore, the investigation of the effect of injection current on [Formula: see text], [Formula: see text] and [Formula: see text] shows that raising the injection current can increase these parameters. Moreover, an increase in the injection current reduces the time response.