Abstract
In the paper, the comparative analysis of the room-temperature (RT) continuous-wave (CW) threshold operation of various designs of oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) is carried out using the 1.3-&mgr;m OC intra-cavity-contacted GaAs-based quantum-well (GaIn)(NAs)/GaAs VCSEL as a typical example. The analysis has been carried out with the aid of the comprehensive fully self-consistent three-dimensional optical-electrical-thermal- gain model. Different VCSEL designs have been found to be optimal depending on their application. An impact of the built-in radial confining mechanisms created by oxide apertures, i.e. an influence of their diameters and localizations on radial confinements of both the current injection into VCSEL active regions and electromagnetic fields of successive cavity modes, has been investigated. A new approach is proposed to enhance CW RT single-fundamental-mode operation in higher-output OC VCSELs. One of their oxide apertures should be shifted to the node position of the resonator standing wave where it is working as the electrical aperture only. Then diameters of both apertures may be changed independently giving an additional degree of freedom for VCSEL designing which enables their optimization.
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