Abstract
The scandium (Sc) and aluminum (Al) co-doped antimony-selenium (Sb45Se25Sc7Al23) thin film was fabricated and systematically investigated in this study. The results reveal that our examined Sb45Se25Sc7Al23 thin film has good thermal stability (the failure temperature for ten years data retention ∼103 °C) and the fast phase change speed (5 ns) at same time. Besides, the Sb45Se25Sc7Al23 thin film shows no multiple phase change, which derives from the fact that no formation of new Sc or Al related phases that are able to trigger multiple states in the thin film. However, it is found that more Sb precipitation is formed by the increase of dopants, which may increase the tendency of multiple phase change. All results suggest Sb45Se25Sc7Al23 thin film would be a good candidate used for phase change random access memory applications.
Published Version
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