Abstract
A comparative study of nitrogen doping in ZnSe and ZnTe has been performed and the results suggest that dopant solubility seems to be the limiting factor, at least under our growth conditions, in obstructing degenerate p-type doping of ZnSe. In an effort to increase the nitrogen acceptor concentration in ZnSe, we have investigated the effects of Te isoelectronic impurity on the nitrogen doping concentration in ZnSe. It was found that the total nitrogen concentration and the nitrogen acceptor concentration are indeed increased, but the room temperature free hole concentration actually drops slightly. Temperature dependent transport measurements were performed and the results show a large increase in compensation ratio as well as a dramatical reduction in hole mobility. The latter is attributed to the tendency for hole localization at the isoelectronic impurity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
