Abstract
Abstract— In order to improve the characteristics of thin‐film electroluminescent (TFEL) devices, the dependence of crystallinity on deposition conditions of ZnS:TbOF thin films deposited by rf‐magnetron sputtering have been studied. The optimal deposition conditions obtained are: rf power density, 1.54 W/cm2; substrate temperature, 175°C; pressure, 5 mTorr; and sputtering gas, pure Ar. Several types of ZnS:TbOF green ACTFEL devices with different stacked insulating‐layer structures were prepared and compared. The ACTFEL device obtained with the superior structure is ITO/SiO2/Ta2O5/ZnS:TbOF/SiO2/Ta2O5/Al. This result suggests that a high‐resistivity dielectric can be used as the second insulating layer adjacent to the phosphor layer and can improve the luminous characteristics of ACTFEL devices in this study.
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