Abstract
In order to fabricate high brightness thin film electroluminescent (TFEL) devices, the dependence of crystallinity on deposition conditions of ZnS: Tb,F thin films deposited by RF-magnetron sputtering system have been studied. The optimal deposition conditions to get the best crystallinity are obtained with a RF power density of 4.39 W/cm 2, substrate temperature 150°C and post-annealed at 550°C for 1 h. The (111) plane spacing and lattice constant are 3.1238 and 5.411 Å, respectively. The green electroluminescent device with the structure of glass/ITO/SiO 2/HfO 2/ZnS: Tb,F/HfO 2/SiO 2/Al has the highest brightness of 830 cd/m 2, under 1 kHz sinusoidal wave voltage excitation and the CIE chromaticity is x = 0.3096 and y = 0.5998, respectively.
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