Characterization of thin films deposited by RF magnetron sputtering for use in a.c. TFEL devices

Abstract

Thin films of have been deposited by RF magnetron sputtering onto 100 mm diameter n-type single-crystal Si wafers. Full deposition and post-deposition variables have been investigated with respect to their effect on the dielectric constant and refractive index of the thin films. Specifically for use as insulators for thin film electroluminescent (TFEL) devices, the films need to exhibit a high dielectric constant and a low refractive index. The optimum fabrication route was determined to be deposition at C in a 30% in Ar atmosphere at 7 mTorr with a post-deposition anneal at C for 1 h. Demonstrated here is that films exhibiting suitable characteristics, namely, and n = 2.1, for use in TFEL devices can be fabricated using RF magnetron sputter deposition.