Abstract
The thickness dependence of tunnel magnetoresistance and resistance area product in Co40Fe40B20/MgO wedge/Co40Fe40B20 magnetic tunnel junctions (MTJs) has been studied for multiple Ar partial pressure (PAr) values during MgO sputtering. The extension of the simple equivalent circuit model [B. Oliver et al., J. Appl. Phys. 91, 4348 (2002)] has been suggested in order to include different transport mechanism contributions to the overall conductance of the MTJ as a function of the MgO barrier thickness. Parameters of the model, used for quantitative description of the conductivity of unpatterned MTJ stacks, have been analyzed as a function of PAr.
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