Abstract
This paper presents the study and analysis of RCD, RLD, and RCD-RLD passive snubber circuits affect on the power losses and suppression of the conducted EMI emission on the power MOSFET. The paper describes the snubber effects on dv/dt during the turn-off period, di/dt during the turn-on period, overvoltage, spike voltage, power loss and the conducted EMI emission. A 100 watt-50 kHz buck converter is used in the simulation and experiment. The measured and simulated results of conducted EMI emission are compared to verify the effectiveness of each snubber circuit.
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