Abstract
SiC power semiconductors are the most promised next-generation power devices due to their high switching speed and low switching losses, which can greatly improve the efficiency of converters. However, accompanying with those advanced characteristics, there exists severe electromagnetic interference problem. And the circuits become much more sensitive to the stray inductances and the stray capacitances. In general, the passive snubber circuit is a simple, robust, and economical way to optimize the switching trajectory of power devices. In this paper, comparisons among three passive snubber circuits used in SiC applications, which are RC snubber, RCD snubber, and clamped RCD snubber respectively, are presented. The characteristics of each snubber circuit are revealed, also with the differences among three passive snubbers being concluded through large amounts of experimental data. The work in this paper contributes to understanding the characteristics of different passive snubbers and choosing a proper passive snubber circuit in actual applications.
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