Abstract

The use of a transmission electron microscope to observe surface structure of thin films has been demonstrated in recent years by diffraction contrast imaging to ∼ 10Å resolution using the forbidden reflections of [111] Au and at atomic resolution using bright-field phase contrast on both [001] and [111] oriented Au films. It has also been possible to demonstrate that beyond a minimum thickness, these films can be free standing and viewed in the microscope without significant modification due to the incident electron beam generating sputtering events at high beam currents. It is therefore now possible to obtain free standing [001] Au films which exhibit various types of surface topography. These films were obtained by varying the growth parameters with a microprocessor controller attached to a UHV deposition system. The deposition of Au was precisely controlled onto a thick Ag substrate which was initially deposited upon NaCl single crystals.Fig. 1 shows a low magnification image ∼ 40Å thick [001] Au film grown at a vacuum level of 5 × 10-9 Torr, 50° substrate temperature and a deposition rate of ∼ 1/20 ML/sec. Clearly defined atomic step regions are visible as demonstrated by the terrace-like contrast variations over extended regions i.e. a step-ledge growth regime. Regions between these terrace areas represent coalescence of individual grains which were not attached at an earlier stage of growth. These regions exhibit finer scale terraces and ledges which follow either <100> or <110> directions as evidenced by comparing their directions to stacking faults and twins occasionally observed in the field of view. Small holes are also present which have crystallographic edge facets and anomalous contrast bands also occur which represent the lack of tracking of the upper surface layer growth to steps which exist at the lower surface. Fig. 1 was obtained by diffraction contrast from the direct beam alone. It was not necessary to use the forbidden reflections here since they produced too drastic a contrast change.

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