Abstract
Abstract The structure of nanocrystalline silicon formed by pulsed laser induced explosive crystallization of amorphous silicon has been studied using Raman spectroscopy. It is found that the properties of nanocrystalline silicon are independent of the laser energy density used to initiate explosive crystallization. From the spectrum in the low-wavenumber region it is infrared that the grains in nanocrystalline silicon are highly distorted. The average grain size, as determined from the position of the main peak in the spectrum, is 5–7 nm. Annealing at 500–600°C results in a decrease of the distortion and an increase in average grain size by 1–2 nm.
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