Abstract
This paper reviews the structure of threading dislocations,nanopipes and inversion domains in (0001) GaN films grown by metal-organicchemical vapour deposition. A new mechanism for generation of misfitdislocations in epitaxial laterally overgrown (ELOG) GaN and in AlGaN/GaNinterfaces is described. Recent cathodoluminescence studies in the scanningelectron microscope are described, showing that individual threading defectsact as non-radiative recombination centres in ELOG GaN and in InGaN quantumwells in GaN.
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