The structure and dielectric properties of thin PZT-type ferroelectric films with a diffuse phase transition

Abstract

Abstract By means of r.f. sputtering of the ceramic targets or pressed powder targets with the chemical constitution of Pb (Zr0.52Ti0.46W0.01Cd0.01) O3 the polycrystalline thin ferroelectric films with the perovskite type structure and of thickness df = (1–2, 5) × 10−6 m on metal (stainless steel, platinum) or ceramic (polycor) substrates have been obtained. In case of thin film deposition on steel substrate and on platinum at low temperatures (Tx < 723 K) the nonferroelectric intermediate layer with the same chemical constitution but with the pyrochlore type structure have been created. Results of the X-ray analysis and dielectric investigations (low frequency dispersion) have proved existence of such a structure. The structural phase transition (P4mm ⇄ Pm3m) takes place in the thin ferroelectric films. This is a diffuse type transition and the degree of diffuseness depends on the structural perfection of the thin films. The measure of the structural perfection of the thin films was taken to be the mean ...