Abstract
By means of rf sputtering the ferroelectric thin film of PZT-type with the chemical constitution Pb(Zr0.52Ti0.46W0.01Cd0.01)O3, thickness df equals (1 - 2.5) multiplied by 10-6 m and polycrystalline structure was obtained. Either metallic foils or ceramics were used as substrates. In the case of thin film deposition on steel substrate and platinum at low temperatures (Ts less than 723 K) the nonferroelectric intermediate layer with the same chemical constitution but with the pyrochlore type structure has been created. Structural peculiarities are reflected in anomalous dielectric dependencies of the thin films. Obtained results are considered and discussed.© (1996) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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