Abstract
AbstractDilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a ‐plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X‐ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X‐ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as‐annealed sample shows obvious ferromagnetic properties. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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