Abstract
The practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0001) crystallographic direction that have been grown by low-pressure metal–organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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