Abstract
Self-assembled InN nanodots have been prepared at650 °C withvarious V/III ratios from 500 to 30 000 by metal–organic chemical vapor deposition (MOCVD). It is found thatthe dot density and morphological size as well as the optical properties all display drastic changes atV/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energyand narrower linewidth were obtained when growth was conducted atV/III ratios slightly lower than 12 000 as compared to those at higherV/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to thesurface structure and the morphology is very similar to molecular beam epitaxially grownGaN and InN films, which may be used as a guide to optimize the InN growth.
Published Version
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