Abstract
Zinc oxide (ZnO) thin films were deposited on Teflon substrates by radio frequency (RF) magnetron sputtering method at different substrate temperature. The dependence of residual stress on the substrate temperature was investigated in this work due to the growth process, the bombardment of energetic particles and process heating to the deposited thin films. From field emission scanning electron microscope (FESEM) images, samples that deposited at various substrate temperatures consists nano-sized particles. The obtained X-ray diffraction (XRD) results, it suggested that ZnO thin film deposited at 40 o C with highly c-axis oriented shows unstressed film compared to other thin films. Besides that, the ZnO thin films deposited at 40 o C shows improved electrical properties.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
