Abstract

There is a growing interest in the realization of highly integrated radar transceivers operating at millimeter-wave (mm-wave) frequencies. In this case, CMOS is the natural technology choice. Modern nanoscale CMOS technologies offer excellent transistor performance with transit frequencies ( f T ) and maximum oscillation frequencies ( f max) exceeding several hundreds of gigahertz. This enables the realization of highly integrated, digitally intensive transceiver systems on chip for mmwave applications, such as 77-GHz automotive radar [1] or wireless data communication systems [2]. Several advanced nanoscale CMOS nodes even surpass the f T and f max values achieved by silicon germanium (SiGe) heterojunction bipolar transistor technologies [3].

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