Abstract
A bistable model is established including the effect of spontaneous emission in a vertical cavity semiconductor optical amplifier (VCSOA). The sensitivities to the amplified spontaneous emission (ASE) of the bistable characteristics in a VCSOA and a traditional edge emitting SOA are compared by numerical analysis. The control of the bistable characteristics and the degeneration of the bistability hysteresis are also analyzed by utilizing the modified model.
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