Abstract
As the size of microcircuit elements continues to decrease it is important to attempt to determine what factors ultimately limit the width of the finest line that could be fabricated by electron lithography and conventional polymer resists. Since the line profiles in an exposed and developed resist are determined by the contours of equal absorbed energy density this can be done by modelling the scattering which occurs in the polymer. We consider here the idealised case of a thin resist layer supported on a substrate of negligible scattering power, and irradiated with a beam of electrons in the energy range 30 to 100 keV, and calculate the minimum line width attainable under these optimum conditions.In the absence of any backscattering from the substrate it might be expected that the energy deposition profiles would be determined by elastic scattering in the resist.
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