Abstract
Single crystals of silicon grown by the Czochralski technique have been annealed at various temperatures in the range 600–1350°C. I.R. measurements have been made of the strength of the absorption bands due to carbon (16·5 μm) and oxygen (9 μm). From the measurements, heats of solution of the two impurities of 53±6 and 38±4 kcal/mole have been deduced respectively. When carbon precipitates broad absorption is produced in the region of 12 μm which is attributed to silicon carbide particles. The strength of this absorption is found to be consistent with the estimated loss of carbon from solution. Precipitation of silicon carbide was not observed in oxygen free crystals.
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