Abstract
Researchers and technologists manufacturing two-dimensional nanoscale systems frequently use oscillations of reflection high energy electron diffraction (RHEED) intensity to control growth of samples at the atomistic level of accuracy. However, it still remains unclear how RHEED oscillations should be described theoretically. In this paper, we present an approach in which oscillating changes in the intensity appear as a combined effect of changes in refraction conditions and changes in diffuse scattering. Initially we analyse the homoepitaxial growth of Fe layers on the Fe(0 0 1) substrate. Subsequently, we interpret experimental data taken from the literature for GaAs layers deposited on the GaAs(0 0 1)-2×4 surface. We discover that changes in the refraction conditions constitute the primary mechanism responsible for the occurrence of RHEED oscillations. In addition in some cases diffuse scattering by step edges plays a significant part.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
