Abstract
A chemical thermodynamic approach is used to predict the site distribution and solubility of amphoteric dopants in multiply-doped crystals of GaAs. The analysis is applied to the experimental results of Greene [1] and of Brozel et al. [2] on GaAs crystals doped with Si and either Sn, Ge or Se. Excellent agreement with the electrically measured carrier concentrations is obtained. It is shown that, whilst Ge commonly behaves as a donor in singly doped GaAs, in the presence of a high silicon concentration it can contribute more acceptors than donors to the crystal.
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