The influence of non-stoichiometry on dopant electrical activation and depth distribution in InP implanted with Group IV or VI elements

Abstract

The present report investigates the influence of implantation-induced non-stoichiometry on dopant electrical activation and depth distribution for Group IV or VI elements implanted in InP. P and In co-implantation increases and decreases, respectively, the electrical activation of Group IV elements (Ge and Sn) with excess P having a much greater influence than excess In. Furthermore, the relative influence of excess P increases as the dopant ion dose increases. Conversely, the electrical activation of Group VI elements (Se and Te) is insensitive to excess P or In. These observations are attributable to amphoteric behaviour (Ge), dopant/defect complexes (Sn) or lack of interstitial character (Se and Te). Excess P also yields changes in the Ge depth distribution, potentially the result of precipitation due to a decrease in dopant solid solubility, while the depth distributions of Sn, Se and Te are insensitive to excess P or In for the implantation and annealing conditions utilized in the present report.