Abstract
In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10°. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity.
Highlights
GaN-based nitrides have achieved great success in solid state lighting because of their wide and direct band gap properties [1]
In addition to the normal spontaneous recombination or simulated recombination, the excitons can couple with photons to form a new hybrid structure, which is proposed theoretically by Hopfield in 1950s [5]
According to the strength of the coupling, it can be divided into strong coupling and weak coupling
Summary
GaN-based nitrides have achieved great success in solid state lighting because of their wide and direct band gap properties [1]. GaN-based light sources from green to ultraviolet have been realized, and they have broad application potential in the fields of lighting, display, biomedicine, high-density data storage, and laser application [2–4] It has been well-known that the light emission in a semiconductor can be from either spontaneous recombination or simulated recombination, and the excitons always play the key role. If the coupling strength increases further, an exciton polariton can be formed, and even reach the state of Bose– Einstein condensate (BEC) under certain conditions. These properties have a wide range of applications, such as ultra-low threshold polariton lasers [7–9]
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