Abstract
The photoluminescence (PL) measurement is considered to be a powerful and convenient method to determine the internal quantum efficiency (IQE) of InGaN/GaN multi-quantum-wells. However, as different calculation models are developed for different PL experiments, the calculated IQE values can sometimes differ a lot, mainly due to different experimental conditions. In this paper, a comparative study is presented among the temperature-dependent PL (TDPL) measurement and power-dependent PL (PDPL) measurement and time-resolved PL (TRPL) measurement, and the relationship between different IQE calculation models is analyzed both theoretically and experimentally. It is revealed that despite distinct IQE values, different PL methods are actually compatible with each other. The discrepancy in TDPL and TRPL results comes from the temperature dependent relationship between the carrier concentration and carrier generation rate. Through a careful conversion of the excitation condition, both TDPL and TRPL results are correspondent to an IQE value under a specific excitation power in the PDPL measurement. Finally, through the combination of different PL measurements, an accurate measurement of IQE and carrier recombination coefficients can be achieved at different temperatures and excitation conditions.
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