Abstract
Approaches using lattice-matched heterostructures consisting of group-IV elements – Si, Ge, Sn and their alloys, are proposed for the development of Si-based lasers that can be monolithically integrated on Si substrate. All proposed laser structures can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Designs of double heterostructure, multiple quantum well, and quantum cascade lasers are presented.
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