Abstract
The semiconductor properties of passive film formed on 304L stainless steel (SS), 316L SS and Alloy 800HT in high-temperature and high-pressure water with zinc addition have been investigated by using Polarization curve, Mott-Schottky analysis and photocurrent method. The donor density, flat band and band gap of semiconductor behavior are analyzed to investigate the impact of zinc addition to the passive film. Analysis of the experimental results indicated that passive film formed on 316L and 800HT with zinc addition showed different electrochemical, photo-electrochemical and semiconductor properties. The results indicated that corrosion resistance of passive film from in high-temperature and high-pressure water with zinc addition was obviously better than that without zinc addition.
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