Abstract
The semiconductor properties of passive films formed on AISI 316L in 1 M H 2SO 4 in three temperatures and AISI 321 in 0.5 M H 2SO 4 were studied by employing Mott–Schottky analysis in conjunction with the point defect model (PDM). Based on the Mott–Schottky analysis in conjunction with PDM, it was shown that the calculated donor density decreases exponentially with increasing passive film formation potential. Also, the results indicated that donor densities increased with temperature. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficients of the donors for two stainless steels are calculated.
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