Abstract

Mo–S–Ti composite films deposited by magnetron sputtering were irradiated by 2 MeV Au2+ with a high fluence of 3.3 × 1015 ion cm−2. Upon intense bombardment by 2 MeV Au2+, the Mo–S–Ti thin film exhibits sensitivity to radiation-induced amorphization at room temperature. Afterwards, thermal annealing experiments on the irradiated thin films were conducted over the temperature range of 200 °C–900 °C. Subsequent annealing experiments found that the effect of heavy ion irradiation on Mo–S–Ti films was a reversible reaction, with the irradiation-damaged MoS2 lattice being completely self-repaired by thermal annealing. In the annealing temperature range of 200 °C–600 °C, no evidence of an amorphous to recrystallized transition was observed. When the temperature was increased to as high as 700 °C, the damaged MoS2 molecules were well recrystallized. HRTEM images of irradiated samples annealed at 700 °C strikingly found that the self-repaired MoS2 crystallites preserving long range ordering were still rearranged in an intrinsic (0 0 2) crystal orientation. MoS2 nanocrystals that survived the ion bombardment step may provide some nucleus for subsequent MoS2 grains growing dominantly in the (0 0 2) direction in thermal annealing. Compared with the difficult recrystallization in thermal annealing, the irradiation-amorphized MoS2 phases were easily self-repaired under friction. The low transition potential barrier from irradiation-induced amorphization to crystallization, achieved by mechanical working, may be an important reason for the quick recrystallization.

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