Abstract
The temperature dependence of the Seebeck coefficient of polycrystalline -SiC films deposited on quartz substrates by laser ablation and of commercially available -SiC wafers is reported in a temperature range of 300-533 K for the first time. The Seebeck emf of -SiC substrates and -SiC samples ranges between -9 µV °C-1 and -108 µV °C-1 which is higher than that of commercial Pt thermocouples.
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