Abstract
Secondary negative ions yields of elements in the IIIrd, IVth, Vth periodic table groups emitted under Cs+ bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forward the development of secondary ion emission model. The ion yield enhancement under particular oxygen surface coverage offers an approach for quantitative analysis of ultra‐shallow semiconductor structures and interfaces. Copyright © 2012 John Wiley & Sons, Ltd.
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