The Schottky effect in punch-through diodes

Abstract

The thermionic emission of holes from a metal into a depleted n-type semiconductor is studied in a metal–n-p silicon structure commonly known as a punch-through or Baritt diode. The experimental conditions are such that the current is controlled by image-force lowering of the metal-semiconductor barrier. It is found that the increase of current with electric field obeys the Schottky law. A small oscillatory deviation from this law due to a quantum-mechanical interference has also been found. The barrier height, as determined from these measurements, agrees well with the barrier height for electrons measured on single Schottky-barrier diodes.