The Schottky barrier at homogeneous impurity distribution in a semiconductor

Abstract

The properties of the metal-semiconductor rectifying junction during the formation of a homogeneous diffuse distribution of electroactive defects in space-charge layers are discussed. The typical values of the effective Schottky barrier and its height fluctuations have been found in the absence of external field in the case of the low-temperature (∼500–700 K) redistribution of a shallow impurity. The Schottky barrier lowering in the junction and the typical inhomogeneity of the barrier height are of the order of the contact potential difference.