Abstract

The issue of inherent surface oxidation on IC chips is decreasing the solderability in packaging industries. In this study, a direct current-atmospheric pressure plasma (DC-APP) with air gas is applied to activate the surface wettability of the Cu substrate for further soldering process. The DC-APP possesses a fast plasma initiation time (0.5 s) and produces reactive oxygen species (ROS), i.e. OH, O*, etc., which acts as the major oxidative agent for the formation of CuOx layer. The plasma-treated Cu substrate with an organic solderability preservatives (OSP) surface finish changes into a hydrophilic property with the increased polar component, which is contributed to form the formation of a uniform copper oxide layer. Compared with the pristine substrate, the plasma-treated substrate shows a decrease of C‒C/C‒H. The oxygen containing polar functional group C = O is increased after the 0.5 s plasma treatment. Quantitatively, the contact angle of the pristine substrate tends to be hydrophobic (63.7 ± 4.7°), and becomes hydrophilic after the 0.5 s plasma treatment (28.4 ± 2.6°), due to the increase of surface roughness. The results are: the solder spreading ratio after the 0.5 s plasma treatment is better than the pristine substrate. After 500 to 1000 h ageing time, the IMC thickness of the treated-sample slowly increases from 6.63 to 6.82 μm, the IMC growth rate is relatively stable (from 1.32 × 10−5 to 1.46 × 10−5 μm/s), and the ductile breaking mode is majorly observed. Furthermore, the wettability of SAC305 on the OSP substrate is observably improved when the DC-APP is applied.

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