Abstract
We have presented a study of the bipolar resistance switching characteristics in the Ag/ZnO/Pt cell. This switching is accompanied by a change in intensity of the photoluminescence emission at 3.33 eV which is attributed to zinc vacancy related transitions in ZnO film. Besides voltage-driven resistance switching phenomena, a transition from a high-resistance state to a lower one is observed under laser illumination at low temperature. These results demonstrate that the bipolar resistance switching can originate due to an electron trapping/de-trapping process at zinc-vacancy defects localized in the interface layer. The Mott metal–insulator transition is proposed as a possible mechanism of the memory effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
