Abstract
The resistive switching (RS) behavior and the impact of Li content on the RS characteristics of the devices comprising Li‐doped ZnO (LiZnO) film sandwiched between LaB6 (bottom) and Au (top) electrodes are investigated. A device consisting of 1 at.% Li‐doped ZnO film (Li1ZnO) exhibits n‐type conductivity and zero‐crossing hysteretic current–voltage characteristics, i.e., bipolar resistive switching (BRS). With an increase in Li content to 10 at.%, the film (Li10ZnO) becomes a ferroelectric p‐type semiconductor and displays BRS behavior along with rectifying property. A distinct advance in the BRS characteristics is observed in the device based on p‐Li10ZnO/n‐Li1ZnO bilayer. The analysis of the conductivity mechanism in Au/p‐Li10ZnO/n‐Li1ZnO/LaB6 device suggests that the enhanced BRS characteristics and rectification are related to both the oxygen vacancy migration in Li1ZnO under external electric field and the p–n junction formed at p‐Li10ZnO/n‐Li1ZnO interface, whose width and potential barrier height are modulated by reversible polarization of Li10ZnO.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
