Abstract
Quantum interactions between the inversion channels of multigate devices and their resulting effects on charge distribution and carrier mobility are analyzed in this paper. Results of this analysis are then used to assess the role of volume inversion on the intrinsic RF performance of double-gate FinFETs. Thin-fin devices are beneficial to low-operating and high-performance powers, and wideband RF blocks, while they are detrimental to low-power cross coupled pair-based RF oscillators, and are more power hungry for high-performance oscillators. Also, we highlight that the intrinsic capacitance variation induced by the fin volume inversion dominates the power and wideband RF performance of FinFETs over the variation in carrier mobility. Accurate definition of fin below 8-10 nm will enable extreme RF performance devices
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